| Nome da marca: | ZMSH |
| Número do modelo: | 6h-n 2 polegadas |
| MOQ: | 3pcs |
| preço: | by case |
| Tempo de entrega: | 2 semanas |
| Condições de pagamento: | T/T, União Ocidental |
As the transportation, energy, and industrial markets evolve, the demand for reliable, high-performance power electronics continues to grow. To meet the requirements for improved semiconductor performance, device manufacturers are turning to wide-bandgap semiconductor materials, such as our 4H-SiC Prime Grade (4H-type n-type silicon carbide) wafers. These wafers offer exceptional crystal quality and low defect density, making them ideal for demanding applications.
Larger wafer diameters enable economies of scale in semiconductor manufacturing, reducing total cost of ownership.
Designed to ensure mechanical compatibility with existing and emerging device fabrication processes.
Can be tailored to meet specific performance and cost requirements for device design.
Low defect density wafers available (MPD ≤ 0.1 cm⁻², TSD ≤ 400 cm⁻², BPD ≤ 1,500 cm⁻²).
| Parameter | 4H-SiC (Single Crystal) | 6H-SiC (Single Crystal) |
|---|---|---|
| Lattice Parameters | a=3.076Å, c=10.053Å | a=3.073Å, c=15.117Å |
| Stacking Sequence | ABCB | ACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm³ | 3.21 g/cm³ |
| Thermal Expansion Coefficient | 4-5*10⁻⁶/K | 4-5*10⁻⁶/K |
| Refractive Index @750nm | n₀=2.61, nₑ=2.66 | n₀=2.60, nₑ=2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type) | a~4.2 W/cm·K @298K | c~3.7 W/cm·K @298K |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K @298K | c~3.9 W/cm·K @298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-down Electrical Field | 3-5*10⁶ V/cm | 3-5*10⁶ V/cm |
| Saturation Drift Velocity | 2.0*10⁵ m/s | 2.0*10⁵ m/s |
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Available in thicknesses of 0.33mm or 0.43mm.
High-purity single-crystal structures for power electronics.
enable improved economies of scale compared to 100mm device fabrication.
We offer comprehensive customization options, including:
| Size | Thickness | Type | Grade |
|---|---|---|---|
| 2-inch | 330μm | 4H-N/4H-Semi/6H-Semi | dummy/research/production |
| 3-inch | 350μm | 4H-N/4H-Semi HPSI | dummy/research/production |
| 4-inch | 350μm | 4H-N/500μm HPSI | dummy/research/production |
| 6-inch | 350μm | 4H-N/500μm 4H-Semi | dummy/research/production |
For detailed technical specifications, please refer to our 150mm Silicon Carbide Wafer Technical PDF.
If you have your own courier account with DHL, FedEx, TNT, UPS, EMS, or SF Express, we can act as your shipping agent.
T/T, PayPal, Western Union, MoneyGram, Letter of Credit. Bank fees: ≤ USD1000 for Western Union; T/T over USD1000 requires telegraphic transfer.
We can tailor material specifications, size parameters, and optical coatings to meet your specific needs.