| Nome da marca: | ZMSH |
| Número do modelo: | ZMSH |
| MOQ: | 10 |
| Tempo de entrega: | 2-4 semanas |
| Condições de pagamento: | T/T |
The sapphire temporary wafer carrier is a high-performance substrate solution designed for advanced semiconductor packaging processes, including ultra-thin wafer handling, 2.5D/3D IC integration, TSV, RDL, and fan-out panel-level packaging (FOPLP).
It provides a rigid, thermally stable, and dimensionally precise support platform for temporary bonding and debonding processes, enabling stable processing of ultra-thin wafers under 50 μm. By addressing critical warpage and stress-induced deformation challenges, the carrier significantly improves process yield, alignment accuracy, and manufacturing stability in advanced packaging flows.
As semiconductor packaging continues to evolve toward higher integration density and thinner wafer structures, manufacturers face increasing difficulties in maintaining structural stability throughout multi-step thermal and mechanical processes.
Key challenges include:
These issues collectively limit process scalability, reduce yield, and increase manufacturing cost in advanced packaging production lines.
Sapphire is an ideal engineering material for temporary wafer carriers due to its unique combination of mechanical, optical, and thermal properties. It provides a stable physical foundation for demanding advanced packaging processes where precision and repeatability are critical.
The sapphire carrier enables:
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With a Young’s modulus of 345–420 GPa, sapphire effectively suppresses bending and warpage, ensuring structural stability during high-stress thermal and mechanical processes.
Vickers hardness of 1800–2200 HV provides excellent resistance to surface damage, enabling long service life and repeated process cycles.
High transmittance (>83% in 300–1200 nm range) supports laser debonding processes and ensures compatibility with multiple temporary bonding technologies.
Low internal variation ensures consistent stress distribution, minimizing localized deformation and improving wafer-level process consistency.
Stable under high-temperature cycling and chemical cleaning environments, making it suitable for high-reuse industrial semiconductor processes.
| Parameter | Specification |
|---|---|
| Wafer Size | 8 inch / 12 inch |
| Panel Size | 100 × 100 mm to 510 × 515 mm |
| Thickness Range | 0.7 – 2.0 mm |
| Parameter | Standard Grade | Advanced Grade |
|---|---|---|
| Total Thickness Variation (TTV) | ≤ 3 μm | ≤ 2 μm |
| Warp | ≤ 100 μm | ≤ 50 μm |
| Thickness Tolerance | ±0.010 mm | ±0.005 mm |
| Surface Roughness (Ra) | < 1.0 nm | < 1.0 nm |
| Scratch/Dig | 60/40 | 40/20 |
| Property | Value |
|---|---|
| Young’s Modulus | 345 – 420 GPa |
| Vickers Hardness | 1800 – 2200 HV |
| Optical Transmittance | >83% (300–1200 nm) |
| Density | 3.98 g/cm³ |
| Thermal Conductivity | 30–40 W/m·K |
| CTE (20°C) | 5.6 – 7.7 ×10⁻⁶/K |
The sapphire temporary wafer carrier enables semiconductor manufacturers to overcome critical warpage and stability limitations in advanced packaging by delivering:
Q1: What makes sapphire suitable for advanced packaging carriers?
A: Sapphire combines ultra-high stiffness, hardness, and thermal stability, which significantly reduces warpage and improves dimensional control during ultra-thin wafer processing.
Q2: Is the carrier compatible with laser debonding processes?
A: Yes. Sapphire offers high optical transmittance in the UV to mid-IR range, making it fully compatible with laser-based debonding and other advanced separation techniques.
Q3: Can sapphire carriers support large panel-level packaging applications?
A: Yes. Sapphire carriers can be manufactured in large panel formats with excellent flatness and uniform stress distribution, making them suitable for FOPLP and other large-area advanced packaging technologies.