6inch 8inch 4H-SEMI SiC Substrate for AR Glasses Optical Grade

A revolutionary optical-grade 4H-SiC substrate designed specifically for AR glasses, grown via ​​Physical Vapor Transport (PVT)​​ and refined through ​​nano-scale polishing​​ and ​​low-stress slicing​​. This product achieves ​​the world’s first single-layer waveguide full-color display solution​​, addressing critical challenges in AR optics:

• ​​Ultra-High Refractive Index (n=2.619@750 nm)​​: Outperforms traditional glass (1.5–1.9) and resin (1.4–1.7), enabling ​​>80° field of view (FOV)​​ with a thickness of only ​​0.55 mm​​ and weight ​​<2 g​​, eliminating the bulkiness and chromatic aberration of multi-layer glass solutions.
• ​​Thermal Conductivity of 490 W/m·K​​: Efficiently dissipates heat from high-power optical modules, ensuring stable performance during prolonged use.
• ​​Transmittance >95% (post-anti-reflective coating)​​: Ultra-low absorption coefficient (α<0.5%/μm @550 nm) minimizes optical loss, enhancing brightness and contrast.

This substrate redefines lightweight, immersive AR experiences, driving the next generation of consumer-grade AR glasses.

1. High Refractive Index with Low Dispersion​​

• ​​Technical Breakthrough​​: The 4H polytype (ABCABCB stacking sequence) achieves ​​n=2.619@750 nm​​, compressing grating periods to ​​300 nm​​ to suppress environmental light diffraction, reducing chromatic dispersion by ​​40%​​.
• ​​Application Value​​: Replaces traditional 3-layer glass waveguides with a ​​single-layer SiC solution​​, reducing thickness by ​​80%​​ and enabling compatibility with Micro LED micro-displays for high-resolution full-color rendering.

2. ​​Ultra-Low Thermal Expansion Coefficient (CTE=3.7×10⁻⁶/K)​​

• ​​Technical Breakthrough​​: The 4H-SiC crystal structure ensures thermal stability, with CTE ​​1/3 that of glass​​, preventing warping and optical path shifts under thermal cycling.
• ​​Application Value​​: Operates reliably in ​​-20–85°C​​ environments, ideal for outdoor AR applications.

3. Nano-Scale Surface Flatness (Ra<0.2 nm)​​

• ​​Technical Breakthrough​​: Combines ​​chemical mechanical polishing (CMP)​​ and plasma etching to eliminate subsurface damage, achieving ​​±5 nm​​ etching precision.
• ​​Application Value​​: Achieves ​​98% waveguide efficiency​​, minimizing light leakage.

4. ​​Defect Density <0.04/cm² (8-inch)​​

• ​​Technical Breakthrough​​: Advanced ​​liquid-phase growth (TSSG)​​ reduces microtube density to ​​<0.04/cm²​​ and dislocation density to ​​<1000/cm²​​.
• ​​Application Value​​: Improves yield to ​​>95%​​, lowering manufacturing costs.

5. ​​Large-Scale 8-inch Production Capability​​

• ​​Technical Breakthrough​​: 8-inch wafers reduce edge waste by ​​7%​​, yielding ​​10–12 AR lenses per wafer​​.
• ​​Application Value​​: Reduces per-lens cost by ​​30–50%​​, accelerating mass-market adoption.

6 Inch 8 Inch 4H-SEMI SiC Substrate Applications​​

1. AR Lens Waveguides​​

• ​​Function​​: 6 inch 8 inch 4H-SEMI SiC substrate acts as a substrate for ​​surface-relief grating waveguides (SRG)​​, enabling full-color, high-resolution displays.
• ​​Advantage​​: Replaces multi-layer glass with a ​​0.55 mm-thin, <2 g lens​​, achieving ​​FOV >80°​​.

2. ​​Micro LED Display Modules​​

• ​​Function​​: 6 inch 8 inch 4H-SEMI SiC substrate serves as a carrier for ​​mass transfer of Micro LEDs​​, enhancing brightness and contrast.
• ​​Advantage​​: High thermal conductivity (​​490 W/m·K​​) resolves Micro LED heat dissipation challenges, supporting ​​>10,000 PPI​​ pixel density.

3. ​​AR Optical Stabilization Systems​​

• ​​Function​​: Integrates ​​MEMS micromirror arrays​​ for dynamic light path compensation.
• ​​Advantage​​: SiC’s mechanical strength (​​450 GPa Young’s modulus​​) and thermal resilience (​​-55–300°C​​) ensure reliability.

​​4. Smart Glasses Thermal Management​​

• ​​Function​​: 6 inch 8 inch 4H-SEMI SiC substrate provides heat dissipation support for AR chips (e.g., SoCs, laser drivers).
• ​​Advantage​​: Withstands ​​>10 W/mm²​​ transient power density, preventing thermal throttling.

1. dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer

2. HPSI High Purity Semi-insulating SiC Wafers 2"3"4"6" 8" Prime/Dummy/Research Grade

6 Inch 8 Inch 4H-SEMI SiC Substrate FAQ