6inch 4H-SEMI SiC Substrate for AR Glasses and 5G RF Devices

The 6-inch 4H-SEMI silicon carbide (4H-SiC) substrate is a wide-bandgap semiconductor material based on the hexagonal crystal structure (4H polytype), engineered for ​​semi-insulating properties​​ (resistivity ≥1×10⁷ Ω·cm). Fabricated via ​​physical vapor transport (PVT)​​ or ​​liquid-phase epitaxy (LPE)​​, it delivers ​​3.26 eV wide bandgap​​, ​​3.5 MV/cm breakdown field​​, ​​4.9 W/cm·K thermal conductivity​​, and ​​high-frequency low-loss characteristics​​, making it ideal for extreme-environment applications such as 5G communications, RF devices, and aerospace electronics. Compared to silicon-based materials, it offers ​​10× higher breakdown field strength​​ and ​​3× superior thermal conductivity​​, enabling stable operation across -200°C to 1,600°C, and serving as an optimal substrate for high-voltage, high-frequency, and high-power devices.

1. Electrical Performance​​

• ​​Wide Bandgap (3.26 eV)​​: 6 inch 4H-SEMI SiC substrate withstands voltages exceeding 10 kV, suitable for high-voltage scenarios like smart grids and EV inverters.

• ​​High Breakdown Field (3.5 MV/cm)​​: 10× higher than silicon, minimizing leakage current and enhancing reliability.

• ​​High Electron Mobility (900 cm²/V·s)​​: 6 inch 4H-SEMI SiC substrate optimizes switching speed in RF devices, reducing conduction losses.

​​2. Thermal & Mechanical Properties​​

• ​​High Thermal Conductivity (4.9 W/cm·K)​​: 3× better heat dissipation than silicon, supporting extreme temperatures (-200°C to 1,600°C).

• ​​High Hardness (Mohs 9.2)​​: 6 inch 4H-SEMI SiC substrate resists wear, compatible with precision processes like CMP and dry etching.

​​3. Process Compatibility​​

• ​​Low Micropipe Density (<1 cm⁻²)​​: 6 inch 4H-SEMI SiC substrate minimizes lattice defects for superior epitaxial layer quality.

• ​​Surface Flatness (Ra <0.2 nm)​​: 6 inch 4H-SEMI SiC substrate ensures compatibility with lithography and thin-film deposition.

​​6 Inch 4H-SEMI SiC Substrate Core Applications​​

1. 5G Communications & RF Devices​​

• ​​Millimeter-Wave RF Modules​​: 6 inch 4H-SEMI SiC substrate enables GaN-on-4H-SiC RF devices for 28 GHz+ bands, improving signal efficiency.
• ​​Low-Loss Filters​​: 6 inch 4H-SEMI SiC substrate reduces signal attenuation, enhancing radar and communication sensitivity.

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2. Electric Vehicles (EVs)​​

• ​​High-Frequency Inverters​​: Compatible with 800V fast-charging platforms, reducing energy loss by >40%.
• ​​Power MOSFETs​​: 6 inch 4H-SEMI SiC substrate cuts 80–90% conduction losses, extending driving range.

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3. Aerospace & Defense​​

• ​​Radiation-Hardened Devices​​: Replaces silicon components, prolonging satellite and rocket system lifespans (>100 Mrad tolerance).
• ​​High-Power Radars​​: 6 inch 4H-SEMI SiC substrate leverages low-loss properties for enhanced detection precision.

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4. Industrial & Energy Systems​​

• ​​Solar Inverters​​: Boosts conversion efficiency by 1–3%, reducing volume by 40–60% for harsh environments.
• ​​Smart Grids​​: 6 inch 4H-SEMI SiC substrate supports high-voltage DC transmission, minimizing heat dissipation and cooling needs.

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6 Inch 4H-SEMI SiC Substrate​​ FAQ