Resumo: Watch this overview to discover why many professionals pay attention to this approach. This video showcases the 4-inch C-Plane SSP Sapphire Substrate Al₂O₃, highlighting its high-purity monocrystalline structure, exceptional mechanical strength, and thermal stability. Learn how it's ideal for epitaxial growth in LED, laser diode, and optical applications.
Características do produto relacionadas:
High-purity single-crystal sapphire (Al₂O₃) with C-plane orientation (0001) and tight ±0.3° tolerance.
Single side polished (SSP) surface with front Ra < 0.2 nm for superior smoothness.
Excellent flatness and low bow (<15 µm) ensuring high precision in applications.
High thermal and chemical stability, suitable for harsh environments.
Customizable axis, diameter, and thickness to meet specific client requirements.
Optical transparency ranging from 190 nm to 5500 nm, ideal for diverse optical uses.
Mohs hardness of 9, offering exceptional scratch resistance and durability.
Widely used in GaN LED substrates, laser diode substrates, and high-precision optoelectronics.
FAQ:
What is the difference between SSP and DSP sapphire wafers?
SSP is single side polished, suitable for epitaxial growth on the polished side; DSP is double side polished, providing ultra-flat surfaces on both sides for high-end optical applications.
Can the wafer be customized?
Yes, we accept custom diameters, thicknesses, and axis orientation according to client specifications.
What are common applications for 4-inch C-plane sapphire wafers?
They are widely used for GaN LED substrates, laser diode substrates, IR windows, SOS devices, and other high-precision optoelectronic or semiconductor applications.